2SA680 |
Part Number | 2SA680 |
Manufacturer | INCHANGE |
Description | ·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Complement to Type 2SC1080 ·Minimum Lot-to-Lot variations for robust device performance ... |
Features |
r-Base Breakdown Voltage
IE= -1mA ;IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A
VBE(on) Base-Emitter On Voltage
IC= -10A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -2A ; VCE= -5V
hFE-2
DC Current Gain
IC= -7A ; VCE= -5V
COB
Output Capacitance
VCB= -10V; ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -2A ; VCE= -5V
hFE-1 Classifications R Y 40-80 70-140 2SA680 MIN TYP. MAX UNIT -100 V -5 V -3.0 V -2.5 V -0.1 mA -0.1 mA 40 140 15 900 pF 6 ... |
Document |
2SA680 Data Sheet
PDF 194.83KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SA680 |
SavantIC |
(2SA679 / 2SA680) Silicon POwer Transistors | |
2 | 2SA683 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
3 | 2SA683 |
SEMTECH |
PNP Transistor | |
4 | 2SA683 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
5 | 2SA683 |
CHINA BASE |
PNP Silicon Epitaxial Planar Transistor |