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·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Complement to Type 2SC5949 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommended for audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃).
itter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A VBE(on) Base-Emitter On Voltage IC= -8A ; VCE= -5V ICBO Collector Cutoff Current VCB= -200V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A ; VCE= -5V hFE-2 DC Current Gain IC= -8A ; VCE= -5V COB Output Capacitance IE=0 ; VCB= -10V;f= 1.0MHz fT Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V MIN TYP. MAX UNIT -200 V -3.0 V -1.5 V -5 μA -5 μA 55 160 35 470 pF 25 MHz hFE-1 Classifications R O 55-110 80-160 NOTI.
2SA2121 - Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 2SA2121 Power Amplifier Applications Unit: mm z Compleme.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA2120 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SA2120 |
Toshiba |
Silicon PNP Transistor |
|
| 3 | 2SA2124 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
| 4 | 2SA2124 |
ON Semiconductor |
Bipolar Transistor |
|
| 5 | 2SA2125 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SA2125 |
ON Semiconductor |
Bipolar Transistor |
|
| 7 | 2SA2126 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 8 | 2SA2126 |
ON Semiconductor |
Bipolar Transistor |
|
| 9 | 2SA2126 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 10 | 2SA2127 |
Sanyo |
PNP Epitaxial Planar Silicon Transistor |
|
| 11 | 2SA2127 |
ON Semiconductor |
Bipolar Transistor |
|
| 12 | 2SA2101 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|