·Recommended for audio frequency amplifier output stage ·Complementary to 2SC5948 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitt.
oltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -800mA VBE(on) Base-Emitter On Voltage IC= -7A ; VCE= -5V ICBO Collector Cutoff Current VCB= -200V ; IE=0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -7A; VCE= -5V MIN TYP. MAX UNIT -200 V -3.0 V -1.5 V -5 uA -5 uA 55 160 35 Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applicatio.
2SA2120 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2120 Power Amplifier Applications • • Complementary to 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA2121 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
2 | 2SA2121 |
Toshiba |
Silicon PNP Transistor | |
3 | 2SA2124 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors | |
4 | 2SA2124 |
ON Semiconductor |
Bipolar Transistor | |
5 | 2SA2125 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors | |
6 | 2SA2125 |
ON Semiconductor |
Bipolar Transistor | |
7 | 2SA2126 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor | |
8 | 2SA2126 |
ON Semiconductor |
Bipolar Transistor | |
9 | 2SA2126 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
10 | 2SA2127 |
Sanyo |
PNP Epitaxial Planar Silicon Transistor | |
11 | 2SA2127 |
ON Semiconductor |
Bipolar Transistor | |
12 | 2SA2101 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |