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2SA2120 - INCHANGE

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2SA2120 PNP Transistor

·Recommended for audio frequency amplifier output stage ·Complementary to 2SC5948 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitt.

Features

oltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -800mA VBE(on) Base-Emitter On Voltage IC= -7A ; VCE= -5V ICBO Collector Cutoff Current VCB= -200V ; IE=0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -7A; VCE= -5V MIN TYP. MAX UNIT -200 V -3.0 V -1.5 V -5 uA -5 uA 55 160 35 Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applicatio.

The same part from a different manufacturer

Datasheet 2SA2120 - Toshiba 2SA2120

2SA2120 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2120 Power Amplifier Applications • • Complementary to 2.

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