2SA1924 - Toshiba Semiconductor

2SA1924 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications 2SA1924 Unit: mm • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE (sat) = −1 V (max) (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage .

Features

t capacitance Symbol ICBO IEBO VCEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob Test Condition VCB = −400 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −20 mA VCE = −5 V, IC = −100 mA IC = −100 mA, IB = −10 mA IC = −100 mA, IB = −10 mA VCE = −5 V, IC = −50 mA VCB = −10 V, IE = 0, f = 1 MHz Min Typ. Max ― ― −400 140 140 ― ― ― ― ― ― ― ― ― −0.4 −0.76 35 18 −10 −1 ― 450 400 −1.0 −0.9 ― ― Unit µA µA V V V MHz pF Turn-on time Switching time Storage time Fall time ton 20 µs A line indIB1 Output ― 0.2 ― l d (Pb IB1 IB2 20 kΩ tstg IB2 ― 2.3 ― µs VCC = −200 V tf IB1 = .