Transistors 2SA1900 Medium power transistor (−50V, −1A) 2SA1900 zFeatures 1) Low saturation voltage, typically VCE(sat)=−0.15V at IC/ IB=−500mA/−50mA 2) PC=2W (on 40×40×0.7mm ceramic board) 3) Complements the 2SC5053 zDimensions (Unit : mm) MPT3 z Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter- ba.
1) Low saturation voltage, typically VCE(sat)=−0.15V at IC/ IB=−500mA/−50mA 2) PC=2W (on 40×40×0.7mm ceramic board) 3) Complements the 2SC5053 zDimensions (Unit : mm) MPT3 z Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter- base voltage Collector current Symbol VCBO VCEO VEBO IC Limits −60 −50 −5 −1 −2 Collector power dissipation PC 0.5 2 Collector power dissipation tj 150 Storage temperature tstg −55 to +150 ∗1 Pw=20ms, Duty=1/2 ∗2 When mounted on a 40 40 0.7mm seramic board. + + (1)Base (2)Collector (3)Emitter Unit V V V A.
SMD Type Medium power transistor 2SA1900 TransistIoCrs Features Low saturation voltage, typically VCE(sat) = ?0.15V a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1900U |
SEMTECH |
PNP Transistor | |
2 | 2SA1905 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor | |
3 | 2SA1906 |
ROHM |
High-speed Switching Transistor | |
4 | 2SA1907 |
Sanken electric |
Silicon PNP Transistor | |
5 | 2SA1907 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SA1907 |
Inchange Semiconductor |
Power Transistor | |
7 | 2SA1908 |
Sanken electric |
Silicon PNP Transistor | |
8 | 2SA1908 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SA1908 |
Inchange Semiconductor |
Power Transistor | |
10 | 2SA1909 |
Sanken electric |
Silicon PNP Transistor | |
11 | 2SA1909 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SA1909 |
Inchange Semiconductor |
Power Transistor |