2SA1908 - Inchange Semiconductor

2SA1908 Power Transistor

·Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5100 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -1.

Features

on Voltage IC= -3A; IB= -0.3A ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -3A; VCE= -4V COB Collector Output Capacitance IE= 0; VCB= -10V; f= 1MHz fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= -12V  hFE classifications O P Y 50-100 70-140 90-180 2SA1908 MIN TYP. MAX UNIT -120 V -0.5 V -10 μA -10 μA 50 180 300 pF 20 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only .