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Ordering number:ENN3879A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1827/2SC4731 100V/4A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applicaions. Features · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current .
· Low collector-to-emitter saturation voltage.
· High Gain-Bandwidth Product.
· Excellent linearity of DC Current Gain.
· Fast switching speed.
Package Dimensions
unit:mm
2084B
[2SA1827/2SC4731]
4.5
10.5
1.9 1.2
2.6 1.4
1.0 8.5
1.2
1.6 0.5
123
Specifications
( ) : 2SA1827 Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Electrical Characteris.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1822 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SA1822 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SA1823 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 4 | 2SA1824 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SA1825 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SA1826 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | 2SA1828 |
Sanyo |
Epitaxial planar type silicon transistor |
|
| 8 | 2SA1801 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 9 | 2SA1802 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor |
|
| 10 | 2SA1803 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 11 | 2SA1803 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SA1803 |
Inchange Semiconductor |
Power Transistor |
|