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·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-.
tion Voltage IC= -6A; IB= -0.6A ICBO Collector Cutoff Current VCB= -120V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -1A ; VCE= -5V hFE Classifications D E F 60-120 100-200 160-320 2SA1788 MIN TYP. MAX UNIT -120 V -2.0 V -2.5 V -10 μA -10 μA 60 320 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The .
2SA1788 - SavantIC
·With TO-247 package ·Complement to type 2SC4652 APPLICATIONS ·For audio output applications PINNING PIN 1 2 3 Base Coll.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1780 |
Rohm |
TRANSISTORS |
|
| 2 | 2SA1781 |
Sanyo Semicon Device |
PNP / NPN Transistor |
|
| 3 | 2SA1782 |
Sanyo |
Silicon Transistor |
|
| 4 | 2SA1783 |
Sanyo Semicon Device |
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 5 | 2SA1784 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 6 | 2SA1785 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 7 | 2SA1786 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 8 | 2SA1787 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SA1789 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SA1789 |
Inchange Semiconductor |
Power Transistor |
|
| 11 | 2SA1700 |
INCHANGE |
PNP Transistor |
|
| 12 | 2SA1700 |
Sanyo Semicon Device |
PNP Epitaxial Silicon Transistor |
|