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Ordering number:EN3581 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1787/2SC4650 High-Definition CRT Display Video Output Applications Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high frequency characteristic: Cre=1.2pF (NPN), 1.7pF (PNP). · Adoption of FBET processes. Package Dimensions unit:mm 206.
· High breakdown voltage : VCEO≥200V.
· Small reverse transfer capacitance and excellent high
frequency characteristic:
Cre=1.2pF (NPN), 1.7pF (PNP).
· Adoption of FBET processes.
Package Dimensions
unit:mm 2064
[2SA1787/2SC4650]
( ) : 2SA1786
E : Emitter C : Collector B : Base
Specifications
SANYO : NMP
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1780 |
Rohm |
TRANSISTORS |
|
| 2 | 2SA1781 |
Sanyo Semicon Device |
PNP / NPN Transistor |
|
| 3 | 2SA1782 |
Sanyo |
Silicon Transistor |
|
| 4 | 2SA1783 |
Sanyo Semicon Device |
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 5 | 2SA1784 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 6 | 2SA1785 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 7 | 2SA1786 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 8 | 2SA1788 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SA1788 |
Inchange Semiconductor |
Power Transistor |
|
| 10 | 2SA1789 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SA1789 |
Inchange Semiconductor |
Power Transistor |
|
| 12 | 2SA1700 |
INCHANGE |
PNP Transistor |
|