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·With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drviers and solenoid drivers application PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltag.
O VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Collector-emitter breakdown voltage IC=-30mA; IB=0 IC=-2A ; IB=-2mA IC=-2A ; IB=-2mA VCB=-100V;IE=0 VEB=-7V;IC=0 IC=-2A ; VCE=-2V IC=-4A ; VCE=-2V -100 V Collector-emitter saturation voltage -1.5 V Base-emitter saturation voltage -2.0 V Collector cut-off current -10 µA Emitter cut-off current -5.0 mA DC current gain 2000 20000 DC current gain 500 hFE classifications M 2000-5000 L 4000-10000 K 8000-20000 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1718 Fig.2 .
2SA1718 - Inchange Semiconductor
·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -2A ·High Switching Speed ·Minimum Lot-to-Lot variations f.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1710 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SA1714 |
NEC |
PNP SILICON EPITAXIAL POWER TRANSISTOR |
|
| 3 | 2SA1715 |
Micro Electronics |
(2SAxxxx) TRANSISTOR |
|
| 4 | 2SA1700 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SA1700 |
Sanyo Semicon Device |
PNP Epitaxial Silicon Transistor |
|
| 6 | 2SA1700 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 7 | 2SA1700 |
LGE |
PNP Transistor |
|
| 8 | 2SA1700 |
GME |
PNP Epitaxial Planar Silicon Transistor |
|
| 9 | 2SA1700 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 10 | 2SA1701 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 11 | 2SA1702 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
| 12 | 2SA1703 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor |
|