of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for.
• High DC current amplifiers due to darlington connection
• Large current capacitance and low VCE(sat)
• TO-126 power transistor with high power dissipation
• Complementary transistor with 2SC4342
QUALITY GRADES
• Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
Electrode Connection 1. Emitter 2. Collector 3. Base 4. Fin (collector)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter vol.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1710 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
2 | 2SA1715 |
Micro Electronics |
(2SAxxxx) TRANSISTOR | |
3 | 2SA1718 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SA1718 |
Inchange Semiconductor |
POWER TRANSISTOR | |
5 | 2SA1700 |
INCHANGE |
PNP Transistor | |
6 | 2SA1700 |
Sanyo Semicon Device |
PNP Epitaxial Silicon Transistor | |
7 | 2SA1700 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
8 | 2SA1700 |
LGE |
PNP Transistor | |
9 | 2SA1700 |
GME |
PNP Epitaxial Planar Silicon Transistor | |
10 | 2SA1700 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR | |
11 | 2SA1701 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
12 | 2SA1702 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |