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2SA1714 - NEC

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2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for.

Features


• High DC current amplifiers due to darlington connection
• Large current capacitance and low VCE(sat)
• TO-126 power transistor with high power dissipation
• Complementary transistor with 2SC4342 QUALITY GRADES
• Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. Electrode Connection 1. Emitter 2. Collector 3. Base 4. Fin (collector) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter vol.

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