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Ordering number:ENN3233 PNP Epitaxial Planar Silicon Transistors 2SA1689 TV Camera Deflection High-Voltage Driver Applications Features · High breakdown voltage. · Small reverse transfer capacitance and excellent high frequency characteristic. · Excellent DC current gain. · Adoption of FBET process. Package Dimensions unit:mm 2003B [2SA1689] 5.0 4.0 4.0 .
· High breakdown voltage.
· Small reverse transfer capacitance and excellent high
frequency characteristic.
· Excellent DC current gain.
· Adoption of FBET process.
Package Dimensions
unit:mm 2003B
[2SA1689]
5.0 4.0 4.0
0.45 0.5
0.45 0.44
0.6 2.0 14.0 5.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Condit.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1680 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 2 | 2SA1681 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 3 | 2SA1682 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 4 | 2SA1683 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
| 5 | 2SA1685 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SA1687 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | 2SA1688 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
| 8 | 2SA1600 |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor |
|
| 9 | 2SA1600 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SA1600 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 11 | 2SA1601 |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor |
|
| 12 | 2SA1601 |
SavantIC |
SILICON POWER TRANSISTOR |
|