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2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • • • • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High collector power dissipation: PC = 900 mW (Ta = 25 °C) High-speed switching: tstg = 300 ns (typ.) Complementary to 2SC4408..
ating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 http://www.Datasheet4U.com 2SA1680 Electrical Characteristics (Ta = 25°C) Characteristics S Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturatio.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1681 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SA1682 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 3 | 2SA1683 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
| 4 | 2SA1685 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SA1687 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SA1688 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
| 7 | 2SA1689 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
| 8 | 2SA1600 |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor |
|
| 9 | 2SA1600 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SA1600 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 11 | 2SA1601 |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor |
|
| 12 | 2SA1601 |
SavantIC |
SILICON POWER TRANSISTOR |
|