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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1625 TRANSISTOR (PNP) FEATURES z High Voltage z High Speed Switching z Low Collector Saturation Voltage TO – 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Volta.
z High Voltage z High Speed Switching z Low Collector Saturation Voltage
TO
– 92
1. EMITTER 2. COLLECTOR 3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value -400 -400
-7 -500 750 166 150 -55~+150
Unit V V V mA
mW ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Col.
2SA1625 - TRANSYS
Transys www.DataSheet4U.com Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA1625 FEATURES Power di.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1620 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SA1621 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 3 | 2SA1621 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 4 | 2SA1621 |
LZG |
SILICON PNP TRANSISTOR |
|
| 5 | 2SA1621 |
Kexin |
PNP Transistors |
|
| 6 | 2SA1624 |
Sanyo Semicon Device |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
|
| 7 | 2SA1624 |
Sanyo |
PNP Epitaxial Planar Silicon Transistor |
|
| 8 | 2SA1626 |
NEC |
PNP SILICON TRANSISTOR |
|
| 9 | 2SA1627 |
NEC |
PNP SILICON TRANSISTOR |
|
| 10 | 2SA1627 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 11 | 2SA1627A |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 12 | 2SA1600 |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor |
|
