2SA1620 - Toshiba Semiconductor

2SA1620 Silicon PNP Transistor

2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1620 Audio Frequency Amplifier Applications • Complementary to 2SC4209 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation.

Features

oncept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = −50 V, IE = 0 IEBO VEB = −5 V, IC = 0 V (BR) CEO IC = −5 mA, IB = 0 hFE (1) (Note) VCE = −2 V, IC = −50 mA hFE (2) VCE (sat) VBE fT Cob VCE = −2 V, IC = −200 mA IC = −200 m.