2SA1327 - Inchange Semiconductor

2SA1327 POWER TRANSISTOR

·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@IC= -8A ·High DC Current Gain- : hFE= 70(Min.)@ IC= -8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Strobe flash applications. ·Audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector.

Features

O Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -8A; VCE= -2V ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -8V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain IC= -8A; VCE= -2V fT Current-Gain—Bandwidth Product IC= -1A; VCE= -2V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz  hFE-1 Classifications O Y 100-200 160-320 MIN TYP. MAX UNIT -20 V -0.5 V -1.5 V -1.0 μA -1.0 μA 100 320 70 45 MHz 40.