SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING APPLICATIONS. COLOR TV CHROMA OUTPUT APPLICATIONS. FEATURES . High Voltage : VCEo=-250V . Low C re : 2.2pF(Max.) . Complementary to 2SC3335 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC .
. High Voltage : VCEo=-250V . Low C re : 2.2pF(Max.) . Complementary to 2SC3335 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL VCBO VcEO VEBO ic ICP IB PC Tj . Tstg RATING -250 -250 -5 -50 -100 -20 1.2 5.0 150 -55-150 UNIT V V V mA mA W °C °C 2.3 »l ! 2.3 r ^t 1 ?, XI < 2 C2' i, 1. EMITTER 2. COLLECTOR (HEAT SINK) 3. BASE TO-126 TOSHI BA 2-8P1A Weight : 0.72.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1320 |
Toshiba Semiconductor |
TRANSISTOR | |
2 | 2SA1320 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
3 | 2SA1320 |
LZG |
SILICON PNP TRANSISTOR | |
4 | 2SA1321 |
Toshiba Semiconductor |
TRANSISTOR | |
5 | 2SA1323 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
6 | 2SA1323 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor | |
7 | 2SA1327 |
Toshiba |
SILICON PNP TRANSISTOR | |
8 | 2SA1327 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SA1327 |
Inchange Semiconductor |
POWER TRANSISTOR | |
10 | 2SA1327A |
Toshiba Semiconductor |
TRANSISTOR | |
11 | 2SA1328 |
INCHANGE |
PNP Transistor | |
12 | 2SA1328 |
SavantIC |
SILICON POWER TRANSISTOR |