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2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • • • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SC3328 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-.
e within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Free Datasheet http://www.Datasheet4U.com 2SA1315 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note2) hFE (2) Collector-emitter saturation vol.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1310 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
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| 2 | 2SA1310 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor |
|
| 3 | 2SA1312 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SA1313 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 5 | 2SA1314 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 6 | 2SA1314 |
Kexin |
Transistors |
|
| 7 | 2SA1316 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor |
|
| 8 | 2SA1316 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 9 | 2SA1316 |
LZG |
SILICON PNP TRANSISTOR |
|
| 10 | 2SA1317 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 11 | 2SA1318 |
Sanyo Semicon Device |
PNP/NPN Silicon Transistor |
|
| 12 | 2SA1318 |
SeCoS |
PNP Transistor |
|