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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1313 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SA1313 Unit: mm • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • High voltage: VCEO = −50 V (min) • Complementary to 2SC3325 • Small package Absolute Max.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1310 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 2 | 2SA1310 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor |
|
| 3 | 2SA1312 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SA1314 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 5 | 2SA1314 |
Kexin |
Transistors |
|
| 6 | 2SA1315 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 7 | 2SA1316 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor |
|
| 8 | 2SA1316 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 9 | 2SA1316 |
LZG |
SILICON PNP TRANSISTOR |
|
| 10 | 2SA1317 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 11 | 2SA1318 |
Sanyo Semicon Device |
PNP/NPN Silicon Transistor |
|
| 12 | 2SA1318 |
SeCoS |
PNP Transistor |
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