·With TO-220F package ·High breakdown voltage ·High power dissipation APPLICATIONS ·For use in low frequency power amplifier Color TV vertical deflection output PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base volt.
Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-10mA ; IB=0 IC=-500mA;IB=-50mA IC=-50mA ; VCE=-4V VCB=-120V;IE=0 VEB=-6V; IC=0 IC=-50mA ; VCE=-4V IC=-500mA ; VCE=-10V IC=-500mA ; VCE=-10V IE=0 ; VCB=-100V;f=1MHz 60 60 4 MIN -150 2SA1280 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -3.0 -1.0 -1 -1 200 V V µA µA MHz 30 pF 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1280 Fig.2 Outline dimensions 3 .
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for ro.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1282 |
Isahaya Electronics Corporation |
Silicon PNP Transistor | |
2 | 2SA1282A |
Isahaya Electronics Corporation |
Silicon PNP Transistor | |
3 | 2SA1283 |
INCHANGE |
PNP Transistor | |
4 | 2SA1283 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
5 | 2SA1283 |
JCET |
PNP Transistor | |
6 | 2SA1284 |
Isahaya Electronics |
Silicon PNP Epitaxial Type Transistor | |
7 | 2SA1285 |
Isahaya Electronics Corporation |
Silicon PNP Transistor | |
8 | 2SA1285A |
Isahaya Electronics Corporation |
Silicon PNP Transistor | |
9 | 2SA1286 |
ETC |
Silicon PNP Epitaxial Type Transistor | |
10 | 2SA1287 |
ETC |
Silicon PNP Epitaxial Type Transistor | |
11 | 2SA1288 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SA1288 |
Inchange Semiconductor |
POWER TRANSISTOR |