2SA1280 |
Part Number | 2SA1280 |
Manufacturer | Inchange Semiconductor |
Description | ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high ... |
Features |
-3.0
V
VBE(ON) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IC= -50mA; Vce=-4V VCB= -120V; IE= 0
-1.0
V
-1.0 μA
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
-1.0 μA
hFE-1
DC Current Gain
IC= -50mA; VCE= -4V
60
200
hFE-2
DC Current Gain
IC= -500mA; VCE= -10V
40
fT
Current-Gain—Bandwidth Product
IC= -0.5A;VCE= -10V
4
MHz
COB
Output Capacitance
IE=0; VCB= -10V; ftest= 1.0MHz
30
pF
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide... |
Document |
2SA1280 Data Sheet
PDF 174.39KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SA1280 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SA1282 |
Isahaya Electronics Corporation |
Silicon PNP Transistor | |
3 | 2SA1282A |
Isahaya Electronics Corporation |
Silicon PNP Transistor | |
4 | 2SA1283 |
INCHANGE |
PNP Transistor | |
5 | 2SA1283 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |