2SA1280 Inchange Semiconductor POWER TRANSISTOR Datasheet, en stock, prix

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2SA1280

Inchange Semiconductor
2SA1280
2SA1280 2SA1280
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Part Number 2SA1280
Manufacturer Inchange Semiconductor
Description ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high ...
Features -3.0 V VBE(ON) Base-Emitter On Voltage ICBO Collector Cutoff Current IC= -50mA; Vce=-4V VCB= -120V; IE= 0 -1.0 V -1.0 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -1.0 μA hFE-1 DC Current Gain IC= -50mA; VCE= -4V 60 200 hFE-2 DC Current Gain IC= -500mA; VCE= -10V 40 fT Current-Gain—Bandwidth Product IC= -0.5A;VCE= -10V 4 MHz COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz 30 pF NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide...

Document Datasheet 2SA1280 Data Sheet
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