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·With TO-220F package ·Low collector saturation voltage APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage .
rent DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-10mA ; IB=0 IC=-3A;IB=-0.15A IC=-3A;IB=-0.15A VCB=-60V;IE=0 VEB=-7V; IC=0 IC=-1A ; VCE=-1V IC=-3A ; VCE=-1V IC=-1A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz 70 30 MIN -60 2SA1279 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -0.4 -1.2 -1 -1 240 V V µA µA 60 200 MHz pF 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1279 Fig.2 Outline dimensions 3 .
2SA1279 - Inchange Semiconductor
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for rob.
2SA1279 - Toshiba
—: ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 1 HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1270 |
KEC |
SILICON PNP TRANSISTOR |
|
| 2 | 2SA1270 |
SEMTECH |
PNP Silicon Transistor |
|
| 3 | 2SA1271 |
KEC |
SILICON PNP TRANSISTOR |
|
| 4 | 2SA1272 |
KEC |
SIlicon PNP Transistor |
|
| 5 | 2SA1273 |
KEC |
SIlicon PNP Transistor |
|
| 6 | 2SA1273 |
BLUE ROCKET ELECTRONICS |
PNP Transistor |
|
| 7 | 2SA1275 |
KEC |
Silicon PNP Transistor |
|
| 8 | 2SA1276 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SA1276 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 10 | 2SA1200 |
Toshiba Semiconductor |
SILICON PNP TRIPLE DIFFUSED TRANSISTOR |
|
| 11 | 2SA1200 |
Kexin |
PNP Transistors |
|
| 12 | 2SA1201 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|