Ordering number:ENN1060C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1249/2SC3117 160V/1.5A Switching Applications Uses · Color TV sound output, converters, inverters. Features · High breakdown voltage. · Large current capacity. · Adoption of MBIT process. Package Dimensions unit:mm 2009B [2SA1249/2SC3117] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.
· High breakdown voltage.
· Large current capacity.
· Adoption of MBIT process.
Package Dimensions
unit:mm
2009B
[2SA1249/2SC3117]
8.0 4.0
2.7
1.5 3.0 7.0
11.0
1.6 0.8
0.8
0.6
3.0
0.5
15.5
( ) : 2SA1249
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditi.
·With TO-126 package ·Complement to type 2SC3117 ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color.
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC3117 ·.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1241 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
2 | 2SA1242 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
3 | 2SA1242 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
4 | 2SA1242 |
JCET |
PNP Transistor | |
5 | 2SA1242 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
6 | 2SA1242 |
LGE |
PNP Transistor | |
7 | 2SA1243 |
Toshiba |
SILICON PNP EPITAXIAL TYPE TRANSISTOR | |
8 | 2SA1244 |
Toshiba Semiconductor |
PNP Transistor | |
9 | 2SA1244 |
INCHANGE |
PNP Transistor | |
10 | 2SA1245 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Planar Transistor | |
11 | 2SA1246 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
12 | 2SA1248 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |