2SA1245 - Toshiba Semiconductor

2SA1245 Silicon PNP Epitaxial Planar Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Planar Type 2SA1245 High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications 2SA1245 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction.

Features

Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = -5 V, IE = 0 VEB = -1 V, IC = 0 VCE = -5 V, IC = -10 mA VCB = -5 V, IE = 0, f = 1 MHz Note: Cre is measured by 3 terminal method with capacitance bridge. Min (Note) ¾ ¾ 20 ¾ ¾ Typ. ¾ ¾ ¾ 0.75 0.60 Max -0.1 -0.1 ¾ ¾ ¾ Unit mA mA pF pF 1 2003-03-19 Marking 2SA1245 2 2003-03-19 2SA1245 3 2003-03-19 2SA1245 4 2003-03-19 2SA1245 RESTRICTIONS ON PRODUCT USE 000707EAA
· TOS.