2SA1235 is a mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.3V max(@Ic=-100mA,IB=-10mA) ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting 2.9 1.90 0.95 0.95 0.4 2SA1235 FOR LOW FREQUENCY AMPLI.
RICAL CHARACTERISTICS(Ta=25℃) Parameter Symbol Test conditions C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E Saturation Vlotage Gain bandwidth product Collector output capacitance Noise figure V(BR)CEO ICBO IEBO hFE hFE VCE(sat) fT Cob NF I C=-100μA ,R BE=∞ V CB=-50V, I E=0mA V EB=-6V, I C=0mA V CE=-6V, I C=-1mA ※ V CE=-6V, I C=-0.1mA I C=-100mA ,IB=-10mA V CE=-6V, I E=10mA V CB=-6V, I E=0,f=1MHz V CE=-6V, I E=0.3mA,f=100Hz,RG=10kΩ Limits Min Typ Max -50 - - - - -0.1 - - -0.1 150 - 800 9.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1232 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SA1232 |
Inchange Semiconductor |
POWER TRANSISTOR | |
3 | 2SA1235-HF |
Kexin |
PNP Transistors | |
4 | 2SA1235A |
GME |
Silicon Epitaxial Planar Transistor | |
5 | 2SA1235A |
SeCoS |
PNP Silicon Plastic Encapsulated Transistor | |
6 | 2SA1235A |
Rectron |
BIPOLAR TRANSISTORS | |
7 | 2SA1235A |
JCST |
PNP Transistor | |
8 | 2SA1235A |
TRANSYS Electronics Limited |
Plastic-Encapsulated Transistors | |
9 | 2SA1235A |
Galaxy Semi-Conductor |
Silicon Epitaxial Planar Transistor | |
10 | 2SA1235A |
Isahaya Electronics Corporation |
Silicon PNP Epitaxial Type Transistor | |
11 | 2SA1237 |
Sanyo |
PNP Transistor | |
12 | 2SA1200 |
Toshiba Semiconductor |
SILICON PNP TRIPLE DIFFUSED TRANSISTOR |