2SA1194K - Hitachi Semiconductor

2SA1194K Silicon PNP Epitaxial Transistor

2SA1194(K) Silicon PNP Epitaxial Application High gain amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base 1 2 3 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak.

Features

ation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test I CBO I EBO hFE VCE(sat) VBE(sat) t on t off Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W)
  –10
  –3 iC (peak)
  –1.0
  –0.3
  –0.1
  –0.03 Area of Safe Operation PW =1 Collector Current IC (A) ms 8 IC (max) PW = 10 ms (1 Shot) D (T C O C = pe 25 rat °C ion ) (1 S hot ) 4 0 50 100 Case Temperature TC (°C) 150 Ta = 25°C
  –0.01
  –0.1
  –0.3
  –1.0
  –3
  –10
  –30
  –100 Collector to emitter Voltage VCE (V) 2 2SA1194(K) Typical Output Characteristics P c = .0
  –0.8 8W
  –1 6 . TC = 25°C .