2SA1193K - Hitachi Semiconductor

2SA1193K Silicon PNP Epitaxial Transistor

2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SA1193(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction tempe.

Features

mitter saturation voltage Turn on time Turn off time Note: 1. Pulse test I CBO I EBO hFE VCE(sat) VBE(sat) t on t off 2 2SA1193(K) Maximum Collector Dissipation Curve 0.9 Collector power dissipation PC (W) Collector current IC (A)
  –3
  –1.0 0.6
  –0.3
  –0.1
  –0.03
  –0.01
  –0.003
  –3 iC (peak) IC max Area of Safe Operation PW t ho 1 s hot s ot ms ms 1 1 sh ms = 1W = 10 00 P =1 PW Ta = 25°C 0.3 0 50 100 150 Ambient Temperature Ta (°C)
  –10
  –30
  –100
  –300 Collector to Emiter Voltage VCE (V) Typical Output Characteristics
  –500 Collector current IC (mA) 00
  –1
  –80 0
  –6 DC Current Transfer Ratio vs. Co.