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·With TO-3P(I) package ·High power dissipations APPLICATIONS ·For audio and general purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-em.
ctor cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-25mA ,IB=0 IE=-1mA ,IC=0 IC=-5A; IB=-0.5A VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-0.5A ; VCE=-10V 55 35 70 MHz MIN -140 -5 -2.0 -10 -10 160 TYP. MAX UNIT V V V µA µA SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1146 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 .
2SA1146 - Toshiba
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1146 AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. FEATURES . Compleme.
2SA1146 - Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- : V(BR)CEO=- 140V(Min) ·Complement to Type 2SC2706 ·Minimum Lot-to-Lot variations .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1141 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SA1141 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 3 | 2SA1142 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SA1142 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 5 | 2SA1144 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 6 | 2SA1145 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 7 | 2SA1145 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SA1145 |
LGE |
NPN Transistor |
|
| 9 | 2SA1147 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SA1147 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 11 | 2SA1102 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SA1102 |
Inchange Semiconductor |
POWER TRANSISTOR |
|