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·With TO-126 package ·Complement to type 2SC2682 APPLICATIONS ·Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-126) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Col.
ut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=-5mA IC=-50mA; IB=-5mA VCB=-180V; IE=0 VEB=-3V; IC=0 IC=-1mA ; VCE=-5V IC=-10mA ; VCE=-5V IC=-20mA ; VCE=-10V IE=0 ; VCB=-10V;f=1MHz 90 100 MIN 2SA1142 SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob TYP. -0.16 -0.8 MAX -0.5 -1.5 -1 -1 UNIT V V µA µA 200 200 180 4.5 320 MHz pF hFE-2 Classifications O 100-200 Y 160-320 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1142 Fig.2 Outline dimensions 3 .
2SA1142 - Inchange Semiconductor
·Low Collector Saturation Voltage ·High voltage,fT ·Complement to Type 2SC2682 ·Minimum Lot-to-Lot variations for robust.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1141 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SA1141 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 3 | 2SA1144 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 4 | 2SA1145 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 5 | 2SA1145 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SA1145 |
LGE |
NPN Transistor |
|
| 7 | 2SA1146 |
Toshiba |
Silicon PNP Transistor |
|
| 8 | 2SA1146 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SA1146 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 10 | 2SA1147 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SA1147 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 12 | 2SA1102 |
SavantIC |
SILICON POWER TRANSISTOR |
|