2SA1029 - Hitachi Semiconductor

2SA1029 Silicon PNP Epitaxial Transistor

2SA1029, 2SA1030 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collec.

Features

5 320
  –0.8
  –0.2 — 4.0 V V MHz pF Unit V V V µA µA Test conditions I C =
  –10 µA, IE = 0 I C =
  –1 mA, RBE = ∞ I E =
  –10 µA, IC = 0 VCB =
  –18 V, IE = 0 VEB =
  –2 V, IC = 0 VCE =
  –12 V, I C =
  –2 mA VCE =
  –12 V, I C =
  –2 mA I C =
  –10 mA, I B =
  –1 mA VCB =
  –12 V, I C =
  –2 mA VCB =
  –10 V, IE = 0, f = 1 MHz Min
  –30
  –30
  –5 — — 100 — — 200 — Typ — — — — — — — — 280 3.3 Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) Gain bandwidth product f T Collector output capacitance Note: B 2SA1029 2SA1030 100 to 200 100 to 200 Cob 1. The 2SA1029 and 2SA1030 are grouped by h FE as f.