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Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 Unit: mm s Features q q 2.8 –0.3 0.65±0.15 +0.2 +0.25 1.5 –0.05 0.65±0.15 0.95 High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (.
q q
2.8
–0.3 0.65±0.15
+0.2
+0.25 1.5
–0.05
0.65±0.15
0.95
High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C)
0.95
2.9
–0.05
1
1.9±0.2
+0.2
3 0.4
–0.05
+0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
2
1.45
+0.2 1.1
–0.1
Ratings
–30
–20
–5
–30 200 150
–55 ~ +150
Uni.
2SA1022 - Panasonic Semiconductor
Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 Unit: mm.
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|---|---|---|---|---|
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