2SA1028 - Inchange Semiconductor

2SA1028 Silicon PNP Power Transistor

·High Current Capability ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -.

Features

se Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -0.1A; VCE= -2V fT Current-Gain—Bandwidth Product IC= -1A; VCE= -10V 2SA1028 MIN TYP. MAX UNIT -100 V -100 V -5 V -1.2 V -1.8 V -10 μA -10 μA 50 60 MHz Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information cont.