2SA1009A - INCHANGE

2SA1009A PNP Transistor

·Low Collector Saturation Voltage- : VCE(sat)= -1V(Max.)@ IC= -0.3A ·Fast Switching Speed ·Wide Reverse Bias Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators, DC/DC converters and High frequency power amplifier application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃.

Features

S)-2 VCE(sat) Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage IC= -0.3A; IB= -0.06A, L=1mH IC= -0.3A; IB1=-IB2= -0.06A, L=180μH, clamped IC= -0.6A; IB1= -0.2A; -IB2= 0.06A, L= 180μH, clamped IC= -0.3A; IB= -0.06A VBE(sat) Base-Emitter Saturation Voltage IC= -0.3A; IB= -0.06A ICBO Collector Cutoff Current VCB= -400V; IE= 0 ICER Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCE= -400V ;RBE= 51Ω,Ta=125℃ VCE= -400V; VBE(off)= -1.5V VCE= -400V; VBE(o.