2N7002K2 - Silikron

2N7002K2 MOSFET

It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate charge. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C VDS VGS .

Features

 Advanced trench MOSFET process technology
 Special designed for PWM, load switching and general purpose applications
 Ultra low on-resistance with low gate charge
 High Power and current handing capability
 Fully Avalanche Rated
 ESD Protection HBM ≥ 2KV 2N7002K2 Marking and pin Assignments Schematic Diagram Description: It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate charge. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applic.