* Gate Pretection Diode SOURCE 2 The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extr nt and cost-e ectiveness device. The 2N7002K is universally used for all commercialindustrial applications. Features: *Simple Drive Requirement *Small Package Outline 2N7002K DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOL.
*Simple Drive Requirement
*Small Package Outline
2N7002K
DRAIN CURRENT 640m AMPERES
DRAIN SOURCE VOLTAGE 60 VOLTAGE
1 2
3
SOT-23
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3,V GS @10V(TA
,V GS @10V(TA Pulsed Drain Current1, 2
Tota l Po wer Dis s ipation(TA=25˚C ) Maximum Junction-ambient 3 Operating Junction Temperature Range Storage Temperature Range
VDS VGS
ID
I DM PD R θJA TJ Tstg
Gate−Source ESD Rating (HBM, Method 3015)
ESD
Value
60 ±20 640 500 950 1.38 90 +150 -55~+150 2500
Unit V
mA
W ˚C.
SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002K Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Lo.
www.vishay.com 2N7002K Vishay Siliconix N-Channel 60 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: 7K 1 G Top Vi.
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Log.
2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4..
2N7002K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ESD rating: 1000V (HBM) Low On.
Features • Voltage Controlled Small Signal Switch • ESD Protected Up To 2KV (HBM) • Moisture Sensitivity Level 1 • Halog.
2N7002K — N-Channel Enhancement Mode Field Effect Transistor September 2014 2N7002K N-Channel Enhancement Mode Field E.
Plastic-Encapsulate Mosfets FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch. .
DATA SHEET www.onsemi.com Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23 2N7002K, 2V7002K Features • ESD .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N7002 |
Fairchild Semiconductor |
N-channel FET | |
2 | 2N7002 |
GME |
N-Channel Power Mosfet | |
3 | 2N7002 |
nexperia |
300mA N-channel MOSFET | |
4 | 2N7002 |
MCC |
N-Channel MOSFET | |
5 | 2N7002 |
Microchip |
N-channel MOSFET | |
6 | 2N7002 |
Rectron |
N-Channel Enhancement Mode Power MOSFET | |
7 | 2N7002 |
ST Microelectronics |
N-Channel MOSFET | |
8 | 2N7002 |
Central Semiconductor |
SILICON N-CHANNEL MOSFET | |
9 | 2N7002 |
Philips |
N-channel vertical D-MOS transistor | |
10 | 2N7002 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
11 | 2N7002 |
ON Semiconductor |
N-channel FET | |
12 | 2N7002 |
NTE |
N-channel FET |