2N7002CSM - Seme LAB

2N7002CSM N-channel MOSFET

2N7002CSM MECHANICAL DATA Dimensions in mm (inches) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR FEATURES 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 0.76 ± 0.15 (0.03 ± 0.006) • V(BR)DSS = 60V A 1.40 (0.055) max. 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.31 rad. (0.012) • RDS(ON) = 7.5Ω • ID = 0.1.

Features

2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 0.76 ± 0.15 (0.03 ± 0.006)
• V(BR)DSS = 60V A 1.40 (0.055) max. 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.31 rad. (0.012)
• RDS(ON) = 7.5Ω
• ID = 0.115A 1.02 ± 0.10 (0.04 ± 0.004) SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1
  – Gate PAD 2
  – Source PAD 3
  – Drain ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated) VDS VGS ID ID IDM PD PD Tj Tstg Drain
  – Source Voltage Gate
  – Source Voltage Drain Current Drain Current Pulsed Drain Current
* Power Dissipation Power Dissipation Storage Temperature Range @ TCASE = 25°C @ .