2N7002CK - NXP

2N7002CK 0.3 A N-channel MOSFET

ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features I I I I Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 3 kV 1.3 Applications I I I I Relay driver High-speed line driver Low-si.

Features

I I I I Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 3 kV 1.3 Applications I I I I Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS ID IDM RDSon Quick reference data Parameter drain-source voltage drain current peak drain current drain-source on-state resistance single pulse; tp ≤ 10 µs VGS = 10 V; ID = 500 mA Conditions Min Typ 1.1 Max 60 300 1.2 1.6 Unit V mA A Ω NXP Semiconductors www.DataSheet4U.com 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET 2. Pinning information Tab.