MOSFET 2N7002-HF (N-Channel) RoHS Device Halogen Free Features -Power dissipation : 0.35W Equivalent Circuit D G : Gate G S : Source D : Drain S SOT-23 0.056(1.40) 0.047(1.20) 0.044(1.10) 0.035(0.90) 0.119(3.00) 0.110(2.80) D GS 0.083(2.10) 0.066(1.70) 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) Maximum Ratings (at TA=25°C) Parameter Symbol Dr.
-Power dissipation : 0.35W Equivalent Circuit D G : Gate G S : Source D : Drain S SOT-23 0.056(1.40) 0.047(1.20) 0.044(1.10) 0.035(0.90) 0.119(3.00) 0.110(2.80) D GS 0.083(2.10) 0.066(1.70) 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) Maximum Ratings (at TA=25°C) Parameter Symbol Drain-Source voltage Drain current Power dissipation Junction and storage temperature VDS ID PD TJ, TSTG Value 60 250 350 -55 ~ +150 Unit V mA mW °C 0.020(0.50) 0.013(0.35) 0.006(0.15)max 0.007(0.20)min Dimensions in inches and (millimeter) Electrical Characteristics (at TA=25°C unless otherwise no.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N7002-01 |
Diodes Incorporated |
N-channel FET | |
2 | 2N7002-G |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
3 | 2N7002-G |
Comchip |
MOSFET | |
4 | 2N7002 |
Fairchild Semiconductor |
N-channel FET | |
5 | 2N7002 |
GME |
N-Channel Power Mosfet | |
6 | 2N7002 |
nexperia |
300mA N-channel MOSFET | |
7 | 2N7002 |
MCC |
N-Channel MOSFET | |
8 | 2N7002 |
Microchip |
N-channel MOSFET | |
9 | 2N7002 |
Rectron |
N-Channel Enhancement Mode Power MOSFET | |
10 | 2N7002 |
ST Microelectronics |
N-Channel MOSFET | |
11 | 2N7002 |
Central Semiconductor |
SILICON N-CHANNEL MOSFET | |
12 | 2N7002 |
Philips |
N-channel vertical D-MOS transistor |