2N7002-01 - Diodes Incorporated

2N7002-01 N-channel FET

2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage G E D G H K J L M SOT-23 A D TOP VIEW B S C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05.

Features

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· Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage G E D G H K J L M SOT-23 A D TOP VIEW B S C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data
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· Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K7A Weight: 0.008 grams (approx.) All Dimensions in mm Maximum Ratings Drain-Source Voltage @ TA = 25°C unless otherwise .