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N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 • VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Hermetic Metal TO39 Package • High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain – Source Voltage 90.
/W 172 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Document Number 3092 .
2N6661 - Supertex Inc
The Supertex 2N6661 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex.
2N6661 - Motorola Inc
2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS .
2N6661 - Microchip
2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon.
2N6661 - Vishay Siliconix
DSCC PART NUMBER Commercial Commercial, Lead (Pb)-free wwSwee.v-is2hFalyo.wcoDmo/cduomc?e6n7t884 JANTX2N6661 (std Au lea.
2N6661 - TT
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 • VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshol.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6660 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs |
|
| 2 | 2N6660 |
Motorola Inc |
TMOS SWITCHING FET TRANSISTORS |
|
| 3 | 2N6660 |
TT |
N-Channel Enhancement Mode Power MOSFET |
|
| 4 | 2N6660 |
Vishay Siliconix |
N-Channel MOSFET |
|
| 5 | 2N6660 |
Microchip |
N-Channel Enhancement-Mode Vertical DMOS FET |
|
| 6 | 2N6660 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 7 | 2N6660-2 |
Vishay Siliconix |
N-Channel MOSFET |
|
| 8 | 2N6660JAN |
Vishay |
N-Channel MOSFET |
|
| 9 | 2N6660JANTX |
Vishay Siliconix |
N-Channel MOSFET |
|
| 10 | 2N6660JANTXV |
Vishay Siliconix |
N-Channel MOSFET |
|
| 11 | 2N6660X |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
|
| 12 | 2N6661-2 |
Vishay |
N-Channel MOSFET |
|