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2N6660 - Supertex Inc

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2N6660 N-Channel Enhancement-Mode Vertical DMOS FETs

The Supertex 2N6660 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Ch.

Features



►Free from secondary breakdown

►Low power drive requirement

►Ease of paralleling

►Low CISS and fast switching speeds

►Excellent thermal stability

►Integral source-drain diode

►High input impedance and high gain

►Hi-Rel processing available Applications

►Motor controls

► Converters

► Amplifiers

► Switches

►Power supply circuits

►Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description The Supertex 2N6660 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven sil.

The same part from a different manufacturer

Datasheet 2N6660 - Motorola Inc 2N6660

2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS .

Datasheet 2N6660 - Vishay Siliconix 2N6660

DSCC PART NUMBER Commercial Commercial, Lead (Pb)-free VISHAY ORDERING PART NUMBER 2N6660 2N6660-E3 2N6660-2 2N6660JTX02.

Datasheet 2N6660 - Microchip 2N6660

2N6660 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon.

Datasheet 2N6660 - Seme LAB 2N6660

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω • Fast Switching • Low Threshol.

Datasheet 2N6660 - TT 2N6660

N-Channel Enhancement Mode Power MOSFET 2N6660 Hermetic Metal TO39 (TO-205AD) Package VDSS = 60V , ID = 1.0A, RDS(ON) = .

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