2N6576 - Central Semiconductor Corp

2N6576 NPN SILICON POWER DARLINGTON TRANSISTOR

The CENTRAL SEMICONDUCTOR 2N6576, 2N6577, and 2N6578 are silicon NPN Darlington power transistors designed for general purpose switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Curr.

Features

ICEO VCE=Rated VCEO IEBO VEB=7.0V BVCEO IC=200mA (2N6576) 60 BVCEO IC=200mA (2N6577) 90 BVCEO IC=200mA (2N6578) 120 VCE(SAT) IC=10A, IB=100mA VCE(SAT) IC=15A, IB=150mA VBE(SAT) IC=10A, IB=100mA VBE(SAT) IC=15A, IB=150mA hFE VCE=3.0V, IC=400mA 200 hFE VCE=3.0V, IC=4.0A 2.0K hFE VCE=3.0V, IC=10A 500 hFE VCE=4.0V, IC=15A 100 MAX 500 5.0 5.0 1.0 7.5 2.8 4.0 3.5 4.5 20K 5.0K UNITS μA mA mA mA mA V V V V V V V R1 (4-April 2014) 2N6576 2N6577 2N6578 SILICON NPN DARLINGTON POWER TRANSISTORS ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIO.