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·Collector-Emitter Sustaining Voltage- : VCEO = 275V(Min.) ·Fast Switching Speed ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters, inverters, pulse-width- modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RA.
Base-Emitter On Voltage IC= 7A; VCE=3V IEBO Emitter Cutoff Current VEB= 8V; IC= 0 ICBO Collector Base Cutoff Current VCB=600V; IE= 0 hFE-1 DC Current Gain IC=3A; VCE=3V hFE-2 DC Current Gain IC= 7A; VCE= 3V fT Current Gain-Bandwidth Product IC= 1A; VCE= 10V Switching times Ton On Time toff Off Time IC= 7A; IB=1.4A, 2N6574 MIN MAX UNIT 1 V 1.4 V 0.1 mA 0.1 mA 20 60 7 21 5 MHz 1 μs 3.2 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only a.
2N6574 - Seme LAB
2N6574 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N657 |
Motorola |
NPN Transistor |
|
| 2 | 2N657 |
CDIL |
NPN SILICON PLANAR TRANSISTOR |
|
| 3 | 2N6573 |
Semelab Plc |
Nipolar NPN Device |
|
| 4 | 2N6573 |
INCHANGE |
NPN Transistor |
|
| 5 | 2N6575 |
Seme LAB |
Bipolar NPN Device |
|
| 6 | 2N6575 |
INCHANGE |
NPN Transistor |
|
| 7 | 2N6576 |
General Semiconductor |
15 AMPERE NPN DARLINGTON |
|
| 8 | 2N6576 |
Central Semiconductor Corp |
NPN SILICON POWER DARLINGTON TRANSISTOR |
|
| 9 | 2N6576 |
Micro Electronics |
(2N6573 - 2N6576) NPN Silicon Transistor |
|
| 10 | 2N6576 |
SavantIC |
(2N6576 - 2N6578) Silicon Power Transistor |
|
| 11 | 2N6576 |
Motorola |
NPN SILICON POWER DARLINGTON TRANSISTOR |
|
| 12 | 2N6576 |
Seme LAB |
Bipolar NPN Device |
|