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The -20V InterFET 2N6550 is targeted for sensitive amplifier stages for mid-frequencies designs. The 2N6550 has a cutoff voltage of less than 3.0V ideal for low-level power supplies. The TO-46 package is hermetically sealed and suitable for military applications. Gate/Case Drain 2 Source Source 1 Drain 2 TO-46 Bottom View 3 1 SOT23 Top View 3 Gate TO-92 Bo.
• InterFET N0450L Geometry
• Low Noise: 0.9 nV/√Hz Typical
• High Gain: 25mS Minimum
• RoHS Compliant
• SMT, TH, and Bare Die Package options.
Applications
• Low-Noise, High Gain Amplifiers
Description
The -20V InterFET 2N6550 is targeted for sensitive amplifier stages for mid-frequencies designs. The 2N6550 has a cutoff voltage of less than 3.0V ideal for low-level power supplies. The TO-46 package is hermetically sealed and suitable for military applications.
Gate/Case Drain 2 Source
Source 1 Drain 2
TO-46 Bottom View
3 1
SOT23 Top View 3 Gate
TO-92 Bottom View
Gate 3 Drain 2 Source 1
Pr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N655 |
Motorola |
PNP Transistor |
|
| 2 | 2N6551 |
Central Semiconductor Corp |
Complementary Silicon Transistors |
|
| 3 | 2N6552 |
Central Semiconductor Corp |
Complementary Silicon Transistors |
|
| 4 | 2N6553 |
Central Semiconductor Corp |
Complementary Silicon Transistors |
|
| 5 | 2N6554 |
Central Semiconductor Corp |
Complementary Silicon Transistors |
|
| 6 | 2N6555 |
Central Semiconductor Corp |
Complementary Silicon Transistors |
|
| 7 | 2N6556 |
Central Semiconductor Corp |
Complementary Silicon Transistors |
|
| 8 | 2N6557 |
Central Semiconductor Corporation |
(2N6558 - 2N6559) NPN Silicon Transistor |
|
| 9 | 2N6558 |
Central Semiconductor Corporation |
(2N6558 - 2N6559) NPN Silicon Transistor |
|
| 10 | 2N6559 |
Central Semiconductor Corporation |
(2N6558 - 2N6559) NPN Silicon Transistor |
|
| 11 | 2N65 |
JINAN JINGHENG |
650V N-Channel Power MOSFET |
|
| 12 | 2N65 |
GME |
N-CHANNEL POWER MOSFET |
|