2N653 thru 2N655 (GERMANIUM) CASE31(1 (10-5) All leads isolated PNP germanium transistor, ·for high-gain amplifier and switching service in the audio frequency range. MAXIMUM RATINGS Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage * Collector D. C. Current Junction Temperature Limits Storage Temperature Limits Collec.
all Signal Current Gain Cutoff
Frequency VCB = 6 V, ~ - 1. 0 mA
fab
1.5
2.0
2.5
MHz
Output Capacity
Cob
10
10
10
pF
VCB .. 6 V, ~
• 0 mA, I,. 1 MHz
Noise Figure
= VCE 4. 5 V, IE .. O. 5 mA, R,. =I, f =kHz
.1f-lHz Collector Reverse Current
VCB - 25 V, ~ =0
Emitter Reverse Current VEB -25V,Ie=0
NF
10
10
10
dB
ICBO
~BO
5.0 15 5.0 15
5.0 15 5.0 15
5,0 15 pA 5.0 15 pA
Collector-Emitter Reverse Current
= VCE " 25 V, RaE 10k
leER
600
600
600 p:A
Base-Emitter Input Voltage
VCE - 6 V, IC =1. 0 mA
VBE
0.3
0.3
0.3 Vdc
2-54
2N653 thru 2N655 (continued)
1000 800
800
..
•.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N65 |
JINAN JINGHENG |
650V N-Channel Power MOSFET | |
2 | 2N65 |
GME |
N-CHANNEL POWER MOSFET | |
3 | 2N65 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2N65 |
UTC |
650V N-CHANNEL POWER MOSFET | |
5 | 2N65-C |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
6 | 2N65-CB |
UTC |
N-CHANNEL MOSFET | |
7 | 2N65-TC |
UTC |
650V N-CHANNEL POWER MOSFET | |
8 | 2N650 |
Motorola |
PNP Transistor | |
9 | 2N6500 |
ETC |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS | |
10 | 2N6500 |
Seme LAB |
Bipolar NPN Device | |
11 | 2N6500 |
SavantIC |
Silicon Power Transistor | |
12 | 2N6500 |
RCA |
Power Transistors |