File No.. 848 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ [ID(J8LJD Solid State Division Power Transistors 2N6510-2N6514 High-Voltage, High-Current Silicon N-P-N Power-Switching Transistors For Switching Applications in Industrial Commercial and Military Equipment JEDEC TO-3 H-1570 Features: a Fast switching speed 1:::1 Epitaxial p.
a Fast switching speed 1:::1 Epitaxial pi-nu construction " Hermetic steel package-JEDEC TO-3 a Maximum.safe-area-of-operation curves a Thermal-cycling rating chart The RCA-2N6510. -2N6511, -2N6512, -2N6513, and -2N6514° are epitaxial silicon n-p-n power transistors with pi-nu construction. They are especially designed for use in electronic ignition circuits and other applications requiring high-voltage, high-energy, and fast-switching-speed capability. These devices are hermetically sealed in a steel JEDEC TO-3 package. They differ from each other in breakdown-voltage ratings, leakage, and.
2N6514 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0..
·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For use in switching power su.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N651 |
Motorola |
PNP Transistor | |
2 | 2N6510 |
RCA |
Power Transistor | |
3 | 2N6510 |
Seme LAB |
Bipolar NPN Device | |
4 | 2N6510 |
SavantIC |
Silicon Power Transistor | |
5 | 2N6511 |
Seme LAB |
Bipolar NPN Device | |
6 | 2N6511 |
RCA |
Power Transistor | |
7 | 2N6511 |
SavantIC |
Silicon Power Transistor | |
8 | 2N6512 |
RCA |
Power Transistor | |
9 | 2N6512 |
SavantIC |
Silicon Power Transistor | |
10 | 2N6512 |
Seme LAB |
Bipolar NPN Device | |
11 | 2N6513 |
RCA |
Power Transistor | |
12 | 2N6513 |
Semelab Plc |
Bipolar NPN Device |