Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2N650A, 2N650 (GERMANIUM) 2N651 A, 2N651 2N652A, 2N652 GERMANIUM PNP MILLIWATT TRANSISTORS · .. designed primarily for low·power audio amplifier and medium· speed switching applications. • Stabilization Bake at 1000C for 120 Hours for Greater Gain Stability • Low Collector· Emitter Saturation Voltage 0.2 Vdc Typ @ IC ~ 200 mA 'MAXIMUM RATINGS Rating Svmb.
t DC/mW DC/mW
FIGURE 1 - POWER
·TEMPERATURE DERATING
220
"- 200 r--..... ,
180
" 1..0s 160
" ~ 1411
"'" ."- >=
;1;
120
ili 100
" C
"- ~~ 80 60
" ~ 40
"" 20
o
'" 20
...
' . 'JC = 0.25DC/mW
.
"..
'JA = 0.375DC/mW"'-
...
. ~
30
40
50
60
70
80
90 100
TA,AMB1ENTTEMPERATURE (DC)
AUDIO TRANSISTORS GERMANIUM PNP
45 VOLTS 200 MILLIWATTS
~:l;iDlA~
~.~~=tI ~DlA
0.240
0.019
1.5
Hi~
Pin 1. Emitter Z.8s. 3.Collector
CASE 31 (1) TO-5
(All leads isolated from Case)
2-52
2N650A,2N650/2N651 A,2N651 /2N652A,2N652 (continued)
*ELECTRICAL CHARACTERIS.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N65 |
JINAN JINGHENG |
650V N-Channel Power MOSFET |
|
| 2 | 2N65 |
GME |
N-CHANNEL POWER MOSFET |
|
| 3 | 2N65 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2N65 |
UTC |
650V N-CHANNEL POWER MOSFET |
|
| 5 | 2N65-C |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 6 | 2N65-CB |
UTC |
N-CHANNEL MOSFET |
|
| 7 | 2N65-TC |
UTC |
650V N-CHANNEL POWER MOSFET |
|
| 8 | 2N650 |
Motorola |
PNP Transistor |
|
| 9 | 2N6500 |
ETC |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
|
| 10 | 2N6500 |
Seme LAB |
Bipolar NPN Device |
|
| 11 | 2N6500 |
SavantIC |
Silicon Power Transistor |
|
| 12 | 2N6500 |
RCA |
Power Transistors |
|