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2N6471 - RCA

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2N6471 Power Transistor

File No. 0/7 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _...:....- OU(]5lJ1] Solid State Division Power Transistors 2N6246 2N6247 2N6248 2N6469 2N6470 2N6471 2N6472 JEDEC TO-3 H-1570 5 iliean N-P-N and P-N-P Epitaxial-Base High-Power Transistors General-Purpose Types for Switching and Linear-Amplifier Applications Features: • High dissip.

Features


• High dissipation capability: 125 W at 25°C
• Low saturation voltages II Maximum safe-area-of-operation curves II Hermetically sealed JEDEC TO-3 package II High gain at high current .. Thermal-cycling rating curve RCA-2N6246, 2N6247, 2N6248, and 2N646g.to. are epitaxialbase silicon p-n-p transistors featuring high gain at high current_ RCA-2N6470, 2N6471, and 2N6472
· are epitaxial-base silicon n-p-n transistors. They may be used as complements to the 2N6469, 2N6246, and 2N6247, respectively_ All of these devices have a dissipation capability of 125 watts at case temperatures up to 250 C_ Th.

The same part from a different manufacturer

Datasheet 2N6471 - SavantIC 2N6471

·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATI.

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