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2N6470 - SavantIC

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2N6470 (2N6470 - 2N6472) Silicon Power Transistor

·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6470 2N6471 2N6472 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETE.

Features

Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6470 VCEO(SUS) Collector-emitter sustaining voltage 2N6471 2N6472 VCEsat-1 VCEsat-2 VBE ICEO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=5A; IB=0.5A IC=15A; IB=3A IC=15A ; VCE=4V IC=0.2A ;IB=0 2N6470 2N6471 2N6472 SYMBOL CONDITIONS MIN 40 60 80 TYP. MAX UNIT V 1.3 3.5 3.5 1.0 0.2 5.0 1..

The same part from a different manufacturer

Datasheet 2N6470 - RCA 2N6470

File No. 0/7 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _...:....- OU(]5lJ1] Solid State Division Pow.

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