·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose of switching and linear-amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6469 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PT Tj T.
e specified PARAMETER CONDITIONS MIN 2N6469 SYMBOL TYP. MAX UNIT VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICEO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter sustaining voltage IC=-0.2A ;IB=0 IC=-5A; IB=-0.5A IC=-15A; IB=-3A IC=-15A ; VCE=-4V VCE=-20V; IB=0 VCE=-45V; VBE=-1.5V TC=150 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=-15A ; VCE=-4V IC=-0.5A ; VCE=-10V -40 V Collector-emitter saturation voltage -1.3 V Collector-emitter saturation voltage -3.5 V Base-emitter on voltage -3.5 V Collector cut-off current 1.0 -0.2 -5.0 -5 mA Collector cut-off current mA Emitter cut-off current mA DC cu.
2N6469 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N6461 |
Seme LAB |
Bipolar NPN Device | |
2 | 2N6462 |
Seme LAB |
Bipolar NPN Device | |
3 | 2N6463 |
Seme LAB |
Bipolar NPN Device | |
4 | 2N6464 |
Seme LAB |
Bipolar NPN Device | |
5 | 2N6465 |
Seme LAB |
Bipolar NPN Device | |
6 | 2N6465 |
SavantIC |
(2N6465 / 2N6466) Silicon Power Transistor | |
7 | 2N6466 |
Seme LAB |
Bipolar NPN Device | |
8 | 2N6466 |
SavantIC |
(2N6465 / 2N6466) Silicon Power Transistor | |
9 | 2N6467 |
Seme LAB |
Bipolar PNP Device | |
10 | 2N6467 |
SavantIC |
(2N6467 / 2N6468) Silicon Power Transistor | |
11 | 2N6468 |
Seme LAB |
Bipolar PNP Device | |
12 | 2N6468 |
Central Semiconductor |
SILICON PNP POWER TRANSISTOR |